TAP2000 Series Datasheet

0.15Ω ≤ 0.99Ω (HC-version); > 0.99Ω ≤ 6 KΩ (higher values on request)

±5 % to ±10 %

±150 ppm/°C Standard; lower TCR on special request for limited ohmic values

2,000 W at 125°C bottom case temperature resp. 60°C heat sink temperature

2,400 W at 70°C for 10sec., ΔR = 0.4% max.

5,000 V DC = 3.500 V AC RMS (50 Hz); higher volt-age on request, not exceeding max. power

120 A

7 kVrms / 50 Hz / 500 VA, test time 1 min. between terminal und case (up to 12 kVrms on request). Voltages above 10 kVrms are tested at DC equiva-lent to avoid pre damage of component

4 kVrms < 10 pC (up to 7 kVrms < 10 pC on request) acc. to IEC 60270

up to 1,500 A depending on pulse length and fre-quency (ask for details)

> 10 GΩ at 1,000 V

up to 12 kV norm wave (1.5/50 μsec)

> 42mm (standard, higher on request)

> 14mm (standard, higher on request)

≥ 80 nH (typical), measuring frequency 10 kHz

≥ 120 pF (typical), measuring frequency 10 kHz

≥ 40 pF (typical), measuring frequency 10 kHz

-55°C to +155°C

torque for contacts 1.8 Nm to 2 Nm; torque 1.6 Nm to 1.8 Nm M4 screws

~120 g

Alumina ceramic metalized film on the base plate for improved heat transfer

Resin-filled epoxy casing with large creeping distance to mass, large air distance between the terminals and high insulation resistance (CTI 600)

Special design for low inductance and capacitance values. The element dem-onstrates stability while covering high wattage and pulse loading

Various sleeves for increasing creep-ing distance up to 85mm, Contacts standard M5 (M4 on special request - connection screw thread max. 7mm)